2011-10-05 1 BCV29, bcv49 1 2 2 3 npn silicon darlington transistors ? for general af applications ? high collector current ? high current gain ? complementary types: bcv28, bcv48 (pnp) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package BCV29 bcv49 ef eg 1=b 1=b 2=c 2=c 3=e 3=e sot89 sot89 maximum ratings parameter symbol value unit collector-emitter voltage BCV29 bcv49 v ceo 30 60 v collector-base voltage BCV29 bcv49 v cbo 40 80 emitter-base voltage v ebo 10 collector current i c 500 ma peak collector current, t p 10 ms i cm 800 base current i b 100 peak base current i bm 200 total power dissipation- t s 130 c p tot 1 w junction temperature t j 150 c storage temperature t st g -65 ... 150
2011-10-05 2 BCV29, bcv49 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 20 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation) electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , BCV29 i c = 10 ma, i b = 0 , bcv49 v (br)ceo 30 60 - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , BCV29 i c = 100 a, i e = 0 , bcv49 v (br)cbo 40 80 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 10 - - collector-base cutoff current v cb = 30 v, i e = 0 , BCV29 v cb = 60 v, i e = 0 , bcv49 v cb = 30 v, i e = 0 , t a = 150 c, BCV29 v cb = 60 v, i e = 0 , t a = 150 c, bcv49 i cbo - - - - - - - - 0.1 0.1 10 10 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 a, v ce = 1 v, BCV29 i c = 100 a, v ce = 1 v, bcv49 i c = 10 ma, v ce = 5 v, BCV29 i c = 10 ma, v ce = 5 v, bcv49 i c = 100 ma, v ce = 5 v, BCV29 i c = 100 ma, v ce = 5 v, bcv49 i c = 0.5 a, v ce = 5 v, BCV29 i c = 0.5 a, v ce = 5 v, bcv49 h fe 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - - collector-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5
2011-10-05 3 BCV29, bcv49 1 pulse test: t < 300s; d < 2% electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 150 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf
2011-10-05 4 BCV29, bcv49 dc current gain h fe = ? ( i c ) v ce = 5 v 10 ehp00325 bcv 29/49 -1 3 10 ma 3 10 6 10 5 5 10 0 10 1 10 4 c fe h 2 10 5 10 ?c 125 5 25 ?c -55 ?c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 1000 0 10 ehp00322 bcv 29/49 cesat v 1.5 0 3 10 c ma 0.5 1.0 1 10 2 10 ?c v 5 5 150 25 ?c -50 ?c base-emitter saturation voltage i c = ? ( v besat ), h fe = 1000 0 10 ehp00323 bcv 29/49 besat v 3.0 0 3 10 c ma 1.0 2.0 1 10 2 10 ?c v 5 5 150 25 ?c -50 ?c collector cutoff current i cbo = ? ( t a ) v cb = v cemax 0 10 ehp00318 bcv 29/49 a t 150 0 4 10 cbo na 50 100 1 10 2 10 3 10 ?c max typ
2011-10-05 5 BCV29, bcv49 transition frequency f t = ? ( i c ) v ce = 5 v 10 ehp00321 bcv 29/49 03 10 ma 1 10 3 10 5 10 1 10 2 10 2 c t f mhz collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb / v eb 1 3 5 7 9 11 13 15 pf 19 c cb / c eb ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 200 400 600 800 mw 1200 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00319 bcv 29/49 -6 -5 10 0 10 s 0 10 2 10 5 5 10 -4 10 -3 10 -2 10 1 5 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 = d tot max tot p dc p p t t p = d t t p t
2011-10-05 6 BCV29, bcv49 package sot89 reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel package outline foot print marking layout (example) standard packing 0.8 0.8 2.0 1.0 1.2 2.5 0.7 0.45 +0.2 1) ejector pin markings possible 1.5 3 0.2 -0.1 b 0.25 1) 0.05 45? 0.15 2.5 0.1 4 0.25 m b b 0.15 0.1 0.35 0.2 1 max. 10? 1.5 0.1 0.2 1.6 -0.15 +0.1 2.75 0.1 4.5 0.1 1 x3 0.2 max. 1) 123 8 0.2 4.3 1.6 4.6 12 pin 1 2005, june date code (ym) baw78d type code pin 1 manufacturer
2011-10-05 7 BCV29, bcv49 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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